IRFR2405TRPBF vs IRLTS2242TRPBF 比較
詳細並排比較 IRFR2405TRPBF 由 Infineon 與 IRLTS2242TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR2405TRPBF | IRLTS2242TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 55 V | -20 V |
| Continuous Drain Current (ID) at Tc=25C | 56 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typ/min/max] |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm | — |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at 5V] | — |
| Total Gate Charge (Qg) | 70 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| 工作接面溫度 | -55C to +175C | — |
| 封裝 | TO-252AA (DPAK) | TSOP-6 (Micro 6) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (Gate, Drain, Source) + Tab | — |
| MSL 等級 | 1 | MSL1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant (Lead-Free PBF suffix) | Compliant |
| 無鹵素 | [DATA_NEEDED: halogen-free status] | Yes |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Polarity | — | P-Channel |
| Continuous Drain Current (ID) at TA=25C | — | -6.9 A |
| Power Dissipation (PD) at TA=25C | — | 2.0 W |
| On-Resistance RDS(on) max at VGS=-10V | — | 32 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS absolute max] |
| Gate Drive Voltage (logic level) | — | 4.5 V (fully enhanced), 2.5 V capable |
| 工作溫度範圍 | — | -55C to +150C (junction) |
| Package Thermal Resistance (RthJA) | — | [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] |
| Lead-Free | — | Yes |