IRFR3710ZTRPBF vs IRFR4105TRPBF Perbandingan

Perbandingan bersamaan detil IRFR3710ZTRPBF dari Infineon dan IRFR4105TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR3710ZTRPBF IRFR4105TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 56 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm —
Power Dissipation (PD) at TC=25C 140 W —
Suhu Hubung Kerja -55C to +175C —
Technology HEXFET (IR MOSFET) HEXFET (5th generation IR MOSFET)
Paket TO-252AA (DPAK) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant (lead-free, PBF suffix)
Lead-Free Yes —
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DS max) — 55 V
Continuous Drain Current (I_D at Tc) — 27 A
On-Resistance (R_DS(on) max at V_GS=10V) — 45 milliohm
Gate-Source Voltage (V_GS max) — 20 V
Total Gate Charge (Q_G) — 22.7 nC
Power Dissipation (P_D at Tc) — 68 W
Rentang Suhu Kerja — -55C to +175C
Gate Threshold Voltage (V_GS(th) typ) — [DATA_NEEDED: V_GS(th) typical value]
Packaging Type — Tape and Reel (TRPBF)
Level MSL — [DATA_NEEDED: MSL rating]
Avalanche Energy (E_AS) — [DATA_NEEDED: E_AS rating]

Spek dan Sumber

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