IRFR3710ZTRPBF vs IRFR4105TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3710ZTRPBF disebabkan oleh Infineon dan IRFR4105TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR3710ZTRPBF | IRFR4105TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 18 mOhm | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Technology | HEXFET (IR MOSFET) | HEXFET (5th generation IR MOSFET) |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant (lead-free, PBF suffix) |
| Lead-Free | Yes | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS max) | — | 55 V |
| Continuous Drain Current (I_D at Tc) | — | 27 A |
| On-Resistance (R_DS(on) max at V_GS=10V) | — | 45 milliohm |
| Gate-Source Voltage (V_GS max) | — | 20 V |
| Total Gate Charge (Q_G) | — | 22.7 nC |
| Power Dissipation (P_D at Tc) | — | 68 W |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Gate Threshold Voltage (V_GS(th) typ) | — | [DATA_NEEDED: V_GS(th) typical value] |
| Packaging Type | — | Tape and Reel (TRPBF) |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |
| Avalanche Energy (E_AS) | — | [DATA_NEEDED: E_AS rating] |