IRFR4620TRLPBF vs IRFR2405TRLPBF Perbandingan
Perbandingan bersamaan detil IRFR4620TRLPBF dari Infineon dan IRFR2405TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR4620TRLPBF | IRFR2405TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFR4620TRLPBF | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) | 24 A at Tc | — |
| On-Resistance (RDS(on)) | 78 mOhm max at VGS=10V | — |
| Gate Charge (Qg) | 25 nC typical | — |
| Power Dissipation (PD) | 144 W at Tc | — |
| Technology | IR MOSFET | HEXFET (IR MOSFET, 7th generation) |
| Paket / Case | TO-252AA (DPAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +175C | — |
| Lead Free | Yes | — |
| Status RoHS | Compliant | — |
| Level MSL | 1 (Unlimited) | — |
| Continuous Drain Current (ID) at Tc | — | 56 A |
| Pulsed Drain Current (IDM) | — | 200 A (typical, per datasheet family) |
| On-Resistance RDS(on) max @ VGS=10V | — | 16 mOhm |
| Gate Charge (Qg) typical | — | 70 nC |
| Power Dissipation (PD) at Tc | — | 110 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Rentang Suhu Kerja | — | -55 C to +175 C (junction) |
| Paket | — | TO-252AA (DPAK), 3-pin (2 + Tab) |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized design) |
| Lead-Free / RoHS | — | Yes, PBF suffix indicates lead-free and RoHS compliant |
| Packaging | — | Tape & Reel (TR) |