IRFR4620TRLPBF vs IRFR2405TRLPBF 比較
詳細並排比較 IRFR4620TRLPBF 由 Infineon 與 IRFR2405TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR4620TRLPBF | IRFR2405TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFR4620TRLPBF | — |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) | 24 A at Tc | — |
| On-Resistance (RDS(on)) | 78 mOhm max at VGS=10V | — |
| Gate Charge (Qg) | 25 nC typical | — |
| Power Dissipation (PD) | 144 W at Tc | — |
| Technology | IR MOSFET | HEXFET (IR MOSFET, 7th generation) |
| 封裝 / 外殼 | TO-252AA (DPAK) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +175C | — |
| Lead Free | Yes | — |
| RoHS 狀態 | Compliant | — |
| MSL 等級 | 1 (Unlimited) | — |
| Continuous Drain Current (ID) at Tc | — | 56 A |
| Pulsed Drain Current (IDM) | — | 200 A (typical, per datasheet family) |
| On-Resistance RDS(on) max @ VGS=10V | — | 16 mOhm |
| Gate Charge (Qg) typical | — | 70 nC |
| Power Dissipation (PD) at Tc | — | 110 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| 工作溫度範圍 | — | -55 C to +175 C (junction) |
| 封裝 | — | TO-252AA (DPAK), 3-pin (2 + Tab) |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized design) |
| Lead-Free / RoHS | — | Yes, PBF suffix indicates lead-free and RoHS compliant |
| Packaging | — | Tape & Reel (TR) |