IRFR4620TRLPBF vs IRFR2405TRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR4620TRLPBF sa pamamagitan ng Infineon at IRFR2405TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR4620TRLPBF | IRFR2405TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFR4620TRLPBF | — |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 55 V |
| Continuous Drain Current (ID) | 24 A at Tc | — |
| On-Resistance (RDS(on)) | 78 mOhm max at VGS=10V | — |
| Gate Charge (Qg) | 25 nC typical | — |
| Power Dissipation (PD) | 144 W at Tc | — |
| Technology | IR MOSFET | HEXFET (IR MOSFET, 7th generation) |
| Packhaging / Kaso | TO-252AA (DPAK) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55C to +175C | — |
| Lead Free | Yes | — |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | 1 (Unlimited) | — |
| Continuous Drain Current (ID) at Tc | — | 56 A |
| Pulsed Drain Current (IDM) | — | 200 A (typical, per datasheet family) |
| On-Resistance RDS(on) max @ VGS=10V | — | 16 mOhm |
| Gate Charge (Qg) typical | — | 70 nC |
| Power Dissipation (PD) at Tc | — | 110 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Hanay ng Temperature na Operasyon | — | -55 C to +175 C (junction) |
| Packhaging | — | TO-252AA (DPAK), 3-pin (2 + Tab) |
| Avalanche Energy Rated | — | Yes (HEXFET ruggedized design) |
| Lead-Free / RoHS | — | Yes, PBF suffix indicates lead-free and RoHS compliant |
| Packaging | — | Tape & Reel (TR) |