IRFR5305TRLPBF vs IRFL014NTRPBF Perbandingan

Perbandingan bersamaan detil IRFR5305TRLPBF dari Infineon dan IRFL014NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR5305TRLPBF IRFL014NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=-10V 65 mΩ —
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] —
Power Dissipation (PD) at Tc=25C 110 W —
Suhu Hubung Kerja -55C to +175C —
Paket TO-252AA (DPAK), surface mount SOT-223 (TO-261-4), 4-pin (3 + tab)
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET HEXFET (planar N-channel, fifth generation)
Avalanche Rated Yes (fully avalanche rated) Yes (fully avalanche rated)
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") Yes / Compliant
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
FET Type — N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at 25 C — 1.9 A
Continuous Drain Current (ID) at 70 C — [DATA_NEEDED: ID at 70 C]
Gate-to-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=10V — 160 milliohm
Gate Charge (Qg) typical — 7 nC
Threshold Voltage VGS(th) typical — [DATA_NEEDED: VGS(th)]
Power Dissipation (PD) at 25 C — 1.0 W (free air), up to 2.1 W with proper PCB copper
Rentang Suhu Kerja — -55 C to +150 C (junction)
dv/dt Rating — Yes (dynamic dv/dt rated)
Level MSL — Level 1 (per JEDEC J-STD-020)

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