IRFR5305TRLPBF vs IRFL014NTRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5305TRLPBF sa pamamagitan ng Infineon at IRFL014NTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRFL014NTRPBF - 55V N-Channel HEXFET MOSFET 1.9A SOT-223 | Infineon
IRFL014NTRPBF ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRFR5305TRLPBF | IRFL014NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc=25C | -31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=-10V | 65 mΩ | — |
| RDS(on) max at VGS=-5V | [DATA_NEEDED: RDS(on) at VGS=-5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | — |
| Packhaging | TO-252AA (DPAK), surface mount | SOT-223 (TO-261-4), 4-pin (3 + tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | HEXFET fifth-generation planar MOSFET | HEXFET (planar N-channel, fifth generation) |
| Avalanche Rated | Yes (fully avalanche rated) | Yes (fully avalanche rated) |
| Lead-Free / RoHS | Yes (Pb-free, suffix "PBF") | Yes / Compliant |
| Tape & Reel Orientation | Left orientation (TRLPBF = Tape & Reel, Left) | — |
| FET Type | — | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at 25 C | — | 1.9 A |
| Continuous Drain Current (ID) at 70 C | — | [DATA_NEEDED: ID at 70 C] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 160 milliohm |
| Gate Charge (Qg) typical | — | 7 nC |
| Threshold Voltage VGS(th) typical | — | [DATA_NEEDED: VGS(th)] |
| Power Dissipation (PD) at 25 C | — | 1.0 W (free air), up to 2.1 W with proper PCB copper |
| Hanay ng Temperature na Operasyon | — | -55 C to +150 C (junction) |
| dv/dt Rating | — | Yes (dynamic dv/dt rated) |
| Level ng MSL | — | Level 1 (per JEDEC J-STD-020) |