IRFR540ZTRPBF vs IRFR540ZTRLPBF Perbandingan

Perbandingan bersamaan detil IRFR540ZTRPBF dari Infineon dan IRFR540ZTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRFR540ZTRLPBF IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRFR540ZTRPBF IRFR540ZTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) 35 A (at Tc) —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
On-Resistance Rds(on) Max 28.5 mOhm at Vgs=10V —
Gate-Source Threshold Vgs(th) [DATA_NEEDED: Vgs(th) typical value] —
Total Gate Charge (Qg) 39 nC 39 nC
Power Dissipation (Pd) 91 W (at Tc) —
Rentang Suhu Kerja -55 C to +175 C (junction) —
Paket TO-252AA (DPAK) surface mount TO-252AA (DPAK) surface mount
Technology IR MOSFET IR MOSFET™ / HEXFET®
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
Level MSL 1 (unlimited floor life at <30 C / 85% RH) —
Status RoHS Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Automotive Qualified Yes (AEC-Q101) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC — 35 A
Pulsed Drain Current (IDM) — 110 A
Static Drain-Source On-Resistance (RDS(on)) — 28.5 mΩ max at VGS=10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical V]
Power Dissipation (PD) at TC — 91 W
Suhu Hubung Kerja — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes (PBF suffix)
Packaging — Tape & Reel (TR-L), 800-piece leader/trailer

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