IRFR540ZTRPBF vs IRFR540ZTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR540ZTRPBF disebabkan oleh Infineon dan IRFR540ZTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRFR540ZTRLPBF IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF ✓ Aktif

Pengandingan Spesifikasi

Parametr IRFR540ZTRPBF IRFR540ZTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) 35 A (at Tc) —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
On-Resistance Rds(on) Max 28.5 mOhm at Vgs=10V —
Gate-Source Threshold Vgs(th) [DATA_NEEDED: Vgs(th) typical value] —
Total Gate Charge (Qg) 39 nC 39 nC
Power Dissipation (Pd) 91 W (at Tc) —
Gambaran Suhu Operasi -55 C to +175 C (junction) —
Kemasan TO-252AA (DPAK) surface mount TO-252AA (DPAK) surface mount
Technology IR MOSFET IR MOSFET™ / HEXFET®
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
Aras MSL 1 (unlimited floor life at <30 C / 85% RH) —
Status RoHS Compliant —
Lead-Free / Halogen-Free Yes / Yes —
Automotive Qualified Yes (AEC-Q101) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC — 35 A
Pulsed Drain Current (IDM) — 110 A
Static Drain-Source On-Resistance (RDS(on)) — 28.5 mΩ max at VGS=10V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical V]
Power Dissipation (PD) at TC — 91 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Automotive Qualification — AEC-Q101 qualified
Lead-Free / RoHS — Yes (PBF suffix)
Packaging — Tape & Reel (TR-L), 800-piece leader/trailer

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