IRFR9024NTRLPBF vs IRFR5505TRLPBF Perbandingan
Perbandingan bersamaan detil IRFR9024NTRLPBF dari Infineon dan IRFR5505TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR9024NTRLPBF | IRFR5505TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| MOSFET Operating Mode | Enhancement | Enhancement |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -11 A | — |
| On-Resistance RDS(on) max at VGS=-10V | 175 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Power Dissipation (PD) at TC=25C | 38 W | — |
| Gate Charge (Qg) typical | 12.7 nC | — |
| Package Type | TO-252AA (DPAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Drain, Gate, Source + Tab) | — |
| Technology | HEXFET (Generation 5) | IR MOSFET™ (HEXFET® generation 5) |
| Rentang Suhu Kerja | -55C to +175C | -55 °C to +175 °C |
| Lead-Free / RoHS | Yes (LPBF suffix) | Yes (PBF suffix) |
| Reel Orientation | Left (TRL suffix) | — |
| VDS (Drain-Source Voltage) | — | -55 V |
| VGS (Gate-Source Voltage) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) | — | -18 A (Tc) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max | — | 110 mOhm (VGS = -10 V) |
| Total Gate Charge (Qg) | — | 21.3 nC |
| Power Dissipation (PD) | — | 57 W (Tc = 25 °C) |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: RθJC] |
| Paket | — | TO-252AA (DPAK), surface mount |
| Level MSL | — | 1 |