IRFR9024NTRPBF vs IRLU024NPBF Perbandingan

Perbandingan bersamaan detil IRFR9024NTRPBF dari Infineon dan IRLU024NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR9024NTRPBF IRLU024NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $0,17 —
Polarity P-Channel —
VDS (Drain-Source Voltage) -55 V —
Continuous Drain Current (Tc=25C) -11 A —
Arus Kedip Pengecor [DATA_NEEDED: pulsed drain current] —
VGS (Gate-Source Voltage) ±20 V —
VGS(th) (Threshold Voltage) [DATA_NEEDED: VGS(th) typical] —
RDS(on) Max at VGS=-10V 175 mOhm —
Total Gate Charge (Qg) 12.7 nC 10 nC (typical, per listing)
Maximum Power Dissipation (Tc=25C) 38 W —
Suhu Hubung Kerja -55C to +175C -55C to +175C
Paket TO-252AA (DPAK) IPAK (TO-251AA), Through Hole
Tipe Mounting Surface Mount Through Hole
Jumlah Pin 3 —
Technology HEXFET (Gen 5) HEXFET Power MOSFET (5th generation)
Status RoHS Compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLU024NPBF
FET Type — N-Channel, Logic-Level
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC=25C — 17 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max at VGS=10V — 65 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) min/typ/max]
Power Dissipation (PD) at TC=25C — 45 W
Thermal Resistance Junction-to-Case (RthJC) — 3.3 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 110 C/W (50 C/W PCB-mounted)
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free plating)
Qualification — JEDEC standard
Gate Drive Voltage (optimized) — 10 V (capable of 4.5 V)

Spek dan Sumber

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