IRFR9024NTRPBF vs IRLU024NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR9024NTRPBF disebabkan oleh Infineon dan IRLU024NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR9024NTRPBF IRLU024NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $0.17 —
Polarity P-Channel —
VDS (Drain-Source Voltage) -55 V —
Continuous Drain Current (Tc=25C) -11 A —
Arus Alir Gesa [DATA_NEEDED: pulsed drain current] —
VGS (Gate-Source Voltage) ±20 V —
VGS(th) (Threshold Voltage) [DATA_NEEDED: VGS(th) typical] —
RDS(on) Max at VGS=-10V 175 mOhm —
Total Gate Charge (Qg) 12.7 nC 10 nC (typical, per listing)
Maximum Power Dissipation (Tc=25C) 38 W —
Suhu Hubungan Operasi -55C to +175C -55C to +175C
Kemasan TO-252AA (DPAK) IPAK (TO-251AA), Through Hole
Jenis Pemasangan Surface Mount Through Hole
Kiraan Pin 3 —
Technology HEXFET (Gen 5) HEXFET Power MOSFET (5th generation)
Status RoHS Compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLU024NPBF
FET Type — N-Channel, Logic-Level
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC=25C — 17 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
On-Resistance RDS(on) max at VGS=10V — 65 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) min/typ/max]
Power Dissipation (PD) at TC=25C — 45 W
Thermal Resistance Junction-to-Case (RthJC) — 3.3 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 110 C/W (50 C/W PCB-mounted)
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free plating)
Qualification — JEDEC standard
Gate Drive Voltage (optimized) — 10 V (capable of 4.5 V)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga