IRFS3006TRL7PP vs BSC076N04NDATMA1 Perbandingan

Perbandingan bersamaan detil IRFS3006TRL7PP dari Infineon dan BSC076N04NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFS3006TRL7PP BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology HEXFET (IR MOSFET™ planar) Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc 240 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] —
On-Resistance RDS(on) max 2.1 mΩ (per Mouser snippet) 7.6 mOhm
On-Resistance RDS(on) typ 1.5 mΩ —
Gate Charge (Qg) 200 nC (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 4 V (max, typical)
Power Dissipation (PD) at Tc 375 W —
Suhu Hubung Kerja -55 °C to +175 °C -55 C to +175 C
Paket D2PAK (TO-263), 7-Lead, Surface Mount —
Tipe Mounting Surface Mount Surface Mount
Body Diode Intrinsic, avalanche-rated —
Level MSL 1 (unlimited) —
Status RoHS Compliant —
Avalanche Energy (EAS) [DATA_NEEDED: single-pulse avalanche energy] —
RθJC Thermal Resistance [DATA_NEEDED: junction-to-case thermal resistance] —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Paket / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

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