IRFS3006TRL7PP vs BSC076N04NDATMA1 比較
詳細並排比較 IRFS3006TRL7PP 由 Infineon 與 BSC076N04NDATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFS3006TRL7PP | BSC076N04NDATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET™ planar) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc | 240 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | — |
| On-Resistance RDS(on) max | 2.1 mΩ (per Mouser snippet) | 7.6 mOhm |
| On-Resistance RDS(on) typ | 1.5 mΩ | — |
| Gate Charge (Qg) | 200 nC (typical) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 4 V (max, typical) |
| Power Dissipation (PD) at Tc | 375 W | — |
| 工作接面溫度 | -55 °C to +175 °C | -55 C to +175 C |
| 封裝 | D2PAK (TO-263), 7-Lead, Surface Mount | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Body Diode | Intrinsic, avalanche-rated | — |
| MSL 等級 | 1 (unlimited) | — |
| RoHS 狀態 | Compliant | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| RθJC Thermal Resistance | [DATA_NEEDED: junction-to-case thermal resistance] | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 3 |
| Configuration | — | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| 封裝 / 外殼 | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |