IRFS4321TRLPBF vs IRFS7440TRLPBF Perbandingan

Perbandingan bersamaan detil IRFS4321TRLPBF dari Infineon dan IRFS7440TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFS4321TRLPBF IRFS7440TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Drain-to-Source Voltage (VDS) 150 V 40 V
Continuous Drain Current (ID) at Tc=25C 85 A 120 A
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
RDS(on) Max at VGS=10V 15 mOhm —
RDS(on) Max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-to-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) Typ 71 nC —
Total Gate Charge (Qg) Max 110 nC —
Power Dissipation (PD) at Tc=25C 350 W 208 W
Thermal Resistance Junction-to-Case (RθJC) Max 0.45 C/W —
Thermal Resistance Junction-to-Case (RθJC) End-of-Life 0.65 C/W (after 1000 cycles -55C to +150C) —
Suhu Hubung Kerja -55C to +175C —
Paket TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263 (D2PAK), surface mount
Tipe Mounting Surface Mount Surface Mount
Technology IR HEXFET (IR MOSFET) MOSFET (Metal Oxide Semiconductor)
Status RoHS Compliant Compliant (lead-free)
Manufacturer — Infineon Technologies
Series — StrongIRFET
On-Resistance (RDS(on)) max at VGS=10V — 2.5 mOhm
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — 90 nC (typical)
Gate Drive Voltage (optimized) — 10 V (normal level)
Operating Frequency Range (optimized) — <100 kHz
Rentang Suhu Kerja — [DATA_NEEDED: junction temperature range]
Qualification — JEDEC standard

Spek dan Sumber

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