IRFS4321TRLPBF vs IRFS7440TRLPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRFS4321TRLPBF tarafından Infineon ve IRFS7440TRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRFS4321TRLPBF IRFS7440TRLPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Drain-to-Source Voltage (VDS) 150 V 40 V
Continuous Drain Current (ID) at Tc=25C 85 A 120 A
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
RDS(on) Max at VGS=10V 15 mOhm —
RDS(on) Max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-to-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) Typ 71 nC —
Total Gate Charge (Qg) Max 110 nC —
Power Dissipation (PD) at Tc=25C 350 W 208 W
Thermal Resistance Junction-to-Case (RθJC) Max 0.45 C/W —
Thermal Resistance Junction-to-Case (RθJC) End-of-Life 0.65 C/W (after 1000 cycles -55C to +150C) —
İşletim Jant Sıcaklığı -55C to +175C —
Paket TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263 (D2PAK), surface mount
Montaj Türü Surface Mount Surface Mount
Technology IR HEXFET (IR MOSFET) MOSFET (Metal Oxide Semiconductor)
RoHS Durumu Compliant Compliant (lead-free)
Manufacturer — Infineon Technologies
Series — StrongIRFET
On-Resistance (RDS(on)) max at VGS=10V — 2.5 mOhm
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — 90 nC (typical)
Gate Drive Voltage (optimized) — 10 V (normal level)
Operating Frequency Range (optimized) — <100 kHz
İşletim Sıcaklığı Aralığı — [DATA_NEEDED: junction temperature range]
Qualification — JEDEC standard

Dökümanlar & Kaynaklar

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