IRFS7440TRLPBF vs IRFS4010TRLPBF Perbandingan

Perbandingan bersamaan detil IRFS7440TRLPBF dari Infineon dan IRFS4010TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFS7440TRLPBF IRFS4010TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series StrongIRFET —
FET Type N-Channel N-Channel MOSFET
Technology MOSFET (Metal Oxide Semiconductor) IR MOSFET (HEXFET)
Drain-to-Source Voltage (VDS) 40 V 100 V
Continuous Drain Current (ID) at Tc=25C 120 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Tc=25C 208 W —
On-Resistance (RDS(on)) max at VGS=10V 2.5 mOhm —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 90 nC (typical) 143 nC
Gate Drive Voltage (optimized) 10 V (normal level) —
Operating Frequency Range (optimized) <100 kHz —
Paket TO-263 (D2PAK), surface mount D2PAK (TO-263AB), surface mount
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: junction temperature range] —
Status RoHS Compliant (lead-free) Compliant
Qualification JEDEC standard JEDEC standard
Continuous Drain Current (ID) at TC=25C — 180 A
RDS(on) max @ VGS=10V — 4.7 mOhm
Gate-to-Source Voltage (VGS) max — Plus or minus 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Power Dissipation (PD) at TC=25C — 375 W
Suhu Hubung Kerja — -55C to +175C
Gate Drive Voltage — 10 V (normal level, optimized)
Level MSL — 1

Spek dan Sumber

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