IRFS7440TRLPBF vs IRFS4010TRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFS7440TRLPBF disebabkan oleh Infineon dan IRFS4010TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFS7440TRLPBF IRFS4010TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series StrongIRFET —
FET Type N-Channel N-Channel MOSFET
Technology MOSFET (Metal Oxide Semiconductor) IR MOSFET (HEXFET)
Drain-to-Source Voltage (VDS) 40 V 100 V
Continuous Drain Current (ID) at Tc=25C 120 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Tc=25C 208 W —
On-Resistance (RDS(on)) max at VGS=10V 2.5 mOhm —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 90 nC (typical) 143 nC
Gate Drive Voltage (optimized) 10 V (normal level) —
Operating Frequency Range (optimized) <100 kHz —
Kemasan TO-263 (D2PAK), surface mount D2PAK (TO-263AB), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: junction temperature range] —
Status RoHS Compliant (lead-free) Compliant
Qualification JEDEC standard JEDEC standard
Continuous Drain Current (ID) at TC=25C — 180 A
RDS(on) max @ VGS=10V — 4.7 mOhm
Gate-to-Source Voltage (VGS) max — Plus or minus 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Power Dissipation (PD) at TC=25C — 375 W
Suhu Hubungan Operasi — -55C to +175C
Gate Drive Voltage — 10 V (normal level, optimized)
Aras MSL — 1

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