IRFS7440TRLPBF vs IRFS4010TRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFS7440TRLPBF sa pamamagitan ng Infineon at IRFS4010TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFS7440TRLPBF IRFS7440TRLPBF - 40V 120A StrongIRFET N-MOSFET | Infineon

IRFS7440TRLPBF - 40V 120A StrongIRFET N-MOSFET | Infineon

IRFS7440TRLPBF ✓ Nakahanda
Infineon
IRFS4010TRLPBF IRFS4010TRLPBF - 100V 180A 4.7mOhm N-Ch MOSFET | Infineon

IRFS4010TRLPBF - 100V 180A 4.7mOhm N-Ch MOSFET | Infineon

IRFS4010TRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFS7440TRLPBF IRFS4010TRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series StrongIRFET —
FET Type N-Channel N-Channel MOSFET
Technology MOSFET (Metal Oxide Semiconductor) IR MOSFET (HEXFET)
Drain-to-Source Voltage (VDS) 40 V 100 V
Continuous Drain Current (ID) at Tc=25C 120 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Tc=25C 208 W —
On-Resistance (RDS(on)) max at VGS=10V 2.5 mOhm —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 90 nC (typical) 143 nC
Gate Drive Voltage (optimized) 10 V (normal level) —
Operating Frequency Range (optimized) <100 kHz —
Packhaging TO-263 (D2PAK), surface mount D2PAK (TO-263AB), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon [DATA_NEEDED: junction temperature range] —
Tindminan RoHS Compliant (lead-free) Compliant
Qualification JEDEC standard JEDEC standard
Continuous Drain Current (ID) at TC=25C — 180 A
RDS(on) max @ VGS=10V — 4.7 mOhm
Gate-to-Source Voltage (VGS) max — Plus or minus 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Power Dissipation (PD) at TC=25C — 375 W
Temperature ng Junction na Operasyon — -55C to +175C
Gate Drive Voltage — 10 V (normal level, optimized)
Level ng MSL — 1

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