IRFS7440TRLPBF vs IRFS4010TRLPBF 比較

詳細並排比較 IRFS7440TRLPBF 由 Infineon 與 IRFS4010TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFS7440TRLPBF IRFS7440TRLPBF - 40V 120A StrongIRFET N-MOSFET | Infineon

IRFS7440TRLPBF - 40V 120A StrongIRFET N-MOSFET | Infineon

IRFS7440TRLPBF ✓ 啟用中
Infineon
IRFS4010TRLPBF IRFS4010TRLPBF - 100V 180A 4.7mOhm N-Ch MOSFET | Infineon

IRFS4010TRLPBF - 100V 180A 4.7mOhm N-Ch MOSFET | Infineon

IRFS4010TRLPBF ✓ 啟用中

規格比較

參數 IRFS7440TRLPBF IRFS4010TRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Series StrongIRFET —
FET Type N-Channel N-Channel MOSFET
Technology MOSFET (Metal Oxide Semiconductor) IR MOSFET (HEXFET)
Drain-to-Source Voltage (VDS) 40 V 100 V
Continuous Drain Current (ID) at Tc=25C 120 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Tc=25C 208 W —
On-Resistance (RDS(on)) max at VGS=10V 2.5 mOhm —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 90 nC (typical) 143 nC
Gate Drive Voltage (optimized) 10 V (normal level) —
Operating Frequency Range (optimized) <100 kHz —
封裝 TO-263 (D2PAK), surface mount D2PAK (TO-263AB), surface mount
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: junction temperature range] —
RoHS 狀態 Compliant (lead-free) Compliant
Qualification JEDEC standard JEDEC standard
Continuous Drain Current (ID) at TC=25C — 180 A
RDS(on) max @ VGS=10V — 4.7 mOhm
Gate-to-Source Voltage (VGS) max — Plus or minus 20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Power Dissipation (PD) at TC=25C — 375 W
工作接面溫度 — -55C to +175C
Gate Drive Voltage — 10 V (normal level, optimized)
MSL 等級 — 1

資料表與資源

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