IRFZ44NPBF vs IRFR4105TRPBF Perbandingan

Perbandingan bersamaan detil IRFZ44NPBF dari Infineon dan IRFR4105TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFZ44NPBF IRFR4105TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 49 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max +/- 20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm —
Total Gate Charge (Qg) 42 nC —
Power Dissipation (PD) at Tc=25C 94 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W —
Suhu Hubung Kerja -55C to +175C —
Paket TO-220AB (3-pin + tab) TO-252AA (DPAK)
Tipe Mounting Through Hole Surface Mount
Technology HEXFET (Advanced Process) HEXFET (5th generation IR MOSFET)
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] —
Status RoHS Compliant Compliant (lead-free, PBF suffix)
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (V_DS max) — 55 V
Continuous Drain Current (I_D at Tc) — 27 A
On-Resistance (R_DS(on) max at V_GS=10V) — 45 milliohm
Gate-Source Voltage (V_GS max) — 20 V
Total Gate Charge (Q_G) — 22.7 nC
Power Dissipation (P_D at Tc) — 68 W
Rentang Suhu Kerja — -55C to +175C
Gate Threshold Voltage (V_GS(th) typ) — [DATA_NEEDED: V_GS(th) typical value]
Packaging Type — Tape and Reel (TRPBF)
Level MSL — [DATA_NEEDED: MSL rating]
Avalanche Energy (E_AS) — [DATA_NEEDED: E_AS rating]

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