IRFZ48NPBF vs IRF9540NPBF Perbandingan
Perbandingan bersamaan detil IRFZ48NPBF dari Infineon dan IRF9540NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFZ48NPBF | IRF9540NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | -100 V |
| Continuous Drain Current (ID) at TC | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| On-Resistance (RDS(on)) at VGS=10V | 14 mΩ (maximum) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 54 nC | 64.7 nC |
| Power Dissipation (PD) at TC | 130 W | — |
| Suhu Hubung Kerja | -55C to +175C | — |
| Paket | TO-220AB (through-hole) | — |
| Tipe Mounting | Through Hole | Through Hole |
| Technology | HEXFET (advanced planar) | — |
| Lead-Free (PBF suffix) | Yes | — |
| Status RoHS | Compliant | Compliant |
| Qualification Standard | Industrial market | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF9540NPBF |
| Tipe Transistor | — | P-Channel MOSFET (HEXFET Power MOSFET) |
| Continuous Drain Current (ID) at Tc | — | -23 A |
| Gate-to-Source Voltage (VGS) max | — | +/-20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 117 mOhm |
| Power Dissipation (PD) at Tc=25C | — | 140 W |
| Rentang Suhu Hubung Kerja | — | -55 C to +175 C |
| Paket / Case | — | TO-220AB (through-hole, 3 pins + tab) |
| Process Technology | — | Planar HEXFET cell structure |
| Qualification | — | JEDEC standard |
| Lead-Free | — | Yes (Pb-free matte tin plating) |