IRFZ48NPBF vs IRF9540NPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFZ48NPBF tarafından Infineon ve IRF9540NPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFZ48NPBF | IRF9540NPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | -100 V |
| Continuous Drain Current (ID) at TC | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| On-Resistance (RDS(on)) at VGS=10V | 14 mΩ (maximum) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 54 nC | 64.7 nC |
| Power Dissipation (PD) at TC | 130 W | — |
| İşletim Jant Sıcaklığı | -55C to +175C | — |
| Paket | TO-220AB (through-hole) | — |
| Montaj Türü | Through Hole | Through Hole |
| Technology | HEXFET (advanced planar) | — |
| Lead-Free (PBF suffix) | Yes | — |
| RoHS Durumu | Compliant | Compliant |
| Qualification Standard | Industrial market | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF9540NPBF |
| Transistor Türü | — | P-Channel MOSFET (HEXFET Power MOSFET) |
| Continuous Drain Current (ID) at Tc | — | -23 A |
| Gate-to-Source Voltage (VGS) max | — | +/-20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 117 mOhm |
| Power Dissipation (PD) at Tc=25C | — | 140 W |
| İşletim Jant Sıcaklığı Aralığı | — | -55 C to +175 C |
| Paket / Kas | — | TO-220AB (through-hole, 3 pins + tab) |
| Process Technology | — | Planar HEXFET cell structure |
| Qualification | — | JEDEC standard |
| Lead-Free | — | Yes (Pb-free matte tin plating) |