IRFZ48NPBF vs IRF9540NPBF Comparison

Detailed side-by-side comparison of IRFZ48NPBF by Infineon and IRF9540NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFZ48NPBF IRFZ48NPBF - 55V 64A N-Channel HEXFET MOSFET TO-220

IRFZ48NPBF - 55V 64A N-Channel HEXFET MOSFET TO-220

IRFZ48NPBF βœ“ Active

Specification Comparison

Parameter IRFZ48NPBF IRF9540NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.86
FET Type N-Channel β€”
Drain-to-Source Voltage (VDS) 55 V -100 V
Continuous Drain Current (ID) at TC 64 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) Β±20 V β€”
On-Resistance (RDS(on)) at VGS=10V 14 mΞ© (maximum) β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge (Qg) 54 nC 64.7 nC
Power Dissipation (PD) at TC 130 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-220AB (through-hole) β€”
Mounting Type Through Hole Through Hole
Technology HEXFET (advanced planar) β€”
Lead-Free (PBF suffix) Yes β€”
RoHS Status Compliant Compliant
Qualification Standard Industrial market β€”
Manufacturer β€” Infineon Technologies (formerly International Rectifier)
Part Number β€” IRF9540NPBF
Transistor Type β€” P-Channel MOSFET (HEXFET Power MOSFET)
Continuous Drain Current (ID) at Tc β€” -23 A
Gate-to-Source Voltage (VGS) max β€” +/-20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V β€” 117 mOhm
Power Dissipation (PD) at Tc=25C β€” 140 W
Operating Junction Temperature Range β€” -55 C to +175 C
Package / Case β€” TO-220AB (through-hole, 3 pins + tab)
Process Technology β€” Planar HEXFET cell structure
Qualification β€” JEDEC standard
Lead-Free β€” Yes (Pb-free matte tin plating)

Datasheets & Resources

Browse All Products Create BOM Request Quote