IRFZ48NPBF vs IRF9540NPBF Comparison
Detailed side-by-side comparison of IRFZ48NPBF by Infineon and IRF9540NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFZ48NPBF | IRF9540NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | -100 V |
| Continuous Drain Current (ID) at TC | 64 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| On-Resistance (RDS(on)) at VGS=10V | 14 mΩ (maximum) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 54 nC | 64.7 nC |
| Power Dissipation (PD) at TC | 130 W | — |
| Operating Junction Temperature | -55C to +175C | — |
| Package | TO-220AB (through-hole) | — |
| Mounting Type | Through Hole | Through Hole |
| Technology | HEXFET (advanced planar) | — |
| Lead-Free (PBF suffix) | Yes | — |
| RoHS Status | Compliant | Compliant |
| Qualification Standard | Industrial market | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF9540NPBF |
| Transistor Type | — | P-Channel MOSFET (HEXFET Power MOSFET) |
| Continuous Drain Current (ID) at Tc | — | -23 A |
| Gate-to-Source Voltage (VGS) max | — | +/-20 V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | — | 117 mOhm |
| Power Dissipation (PD) at Tc=25C | — | 140 W |
| Operating Junction Temperature Range | — | -55 C to +175 C |
| Package / Case | — | TO-220AB (through-hole, 3 pins + tab) |
| Process Technology | — | Planar HEXFET cell structure |
| Qualification | — | JEDEC standard |
| Lead-Free | — | Yes (Pb-free matte tin plating) |