IRFZ48NSTRLPBF vs IRLR3636TRPBF Perbandingan

Perbandingan bersamaan detil IRFZ48NSTRLPBF dari Infineon dan IRLR3636TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFZ48NSTRLPBF IRLR3636TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Power MOSFET N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) @ Tc=25C 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΩ at VGS = 10 V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 54 nC —
Gate-to-Source Voltage (VGS) max ±20 V —
Power Dissipation (Pd) @ Tc=25C 130 W —
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W —
Suhu Hubung Kerja -55C to +175C —
Paket D2PAK (TO-263) Surface Mount TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel, TRL) —
Lead Finish Lead-free (PBF) matte tin —
Status RoHS Compliant Compliant
Technology Family HEXFET advanced process technology —
Drain-to-Source Voltage (V_DSS) — 60 V
Continuous Drain Current (I_D) at T_C = 25C — 50 A
Continuous Drain Current (I_D) at T_C = 100C — [DATA_NEEDED: I_D at 100C]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Maximum R_DS(on) at V_GS = 10V — 6.8 mOhm
Typical R_DS(on) at V_GS = 10V — 5.4 mOhm
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) range]
Total Gate Charge (Q_G) — 33 nC
Maximum Power Dissition (P_D) at T_C = 25C — 143 W
Rentang Suhu Kerja — -55C to +175C
Technology — IR HEXFET / IR MOSFET
Lead-Free — Yes (PBF suffix)

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