IRFZ48NSTRLPBF vs IRLR3636TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ48NSTRLPBF disebabkan oleh Infineon dan IRLR3636TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFZ48NSTRLPBF IRLR3636TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Power MOSFET N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) @ Tc=25C 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΩ at VGS = 10 V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 54 nC —
Gate-to-Source Voltage (VGS) max ±20 V —
Power Dissipation (Pd) @ Tc=25C 130 W —
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan D2PAK (TO-263) Surface Mount TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel, TRL) —
Lead Finish Lead-free (PBF) matte tin —
Status RoHS Compliant Compliant
Technology Family HEXFET advanced process technology —
Drain-to-Source Voltage (V_DSS) — 60 V
Continuous Drain Current (I_D) at T_C = 25C — 50 A
Continuous Drain Current (I_D) at T_C = 100C — [DATA_NEEDED: I_D at 100C]
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Maximum R_DS(on) at V_GS = 10V — 6.8 mOhm
Typical R_DS(on) at V_GS = 10V — 5.4 mOhm
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) range]
Total Gate Charge (Q_G) — 33 nC
Maximum Power Dissition (P_D) at T_C = 25C — 143 W
Gambaran Suhu Operasi — -55C to +175C
Technology — IR HEXFET / IR MOSFET
Lead-Free — Yes (PBF suffix)

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