IRL3705NPBF vs IRFB7534PBF Perbandingan

Perbandingan bersamaan detil IRL3705NPBF dari Infineon dan IRFB7534PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRL3705NPBF IRFB7534PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (V_DS) 55 V —
Continuous Drain Current (I_D) at Tc 89 A —
Arus Kedip Pengecor [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc 170 W —
On-Resistance R_DS(on) 10 mOhm (typical, V_GS = 5 V) —
Gate Threshold V_GS(th) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Q_g 65.3 nC —
Maximum Junction Temperature 175 C —
Technology HEXFET (planar cell, fifth generation) StrongIRFET™ (planar N-channel)
Paket TO-220AB (3-pin through-hole) TO-220AB
Tipe Mounting Through Hole Through Hole
Gate Drive Level Logic-level —
Avalanche Rated Yes (ruggedized single-pulse avalanche) —
Lead-Free (PBF suffix) Yes —
Status RoHS Compliant (per PBF suffix) Compliant (PbF suffix)
Manufacturer — Infineon Technologies
Part Number — IRFB7534PBF
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at Tc=25C — 195 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C — 294 W
On-Resistance RDS(on) max at VGS=10V — 2.4 mOhm
Gate Threshold Voltage VGS(th) — 3.7 V (typ)
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Avalanche Energy Rated — Yes
Rentang Suhu Kerja — -55C to +175C
Level MSL — MSL1 (unlimited floor life)

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