IRL3705NPBF vs IRFB7534PBF 比較

詳細並排比較 IRL3705NPBF 由 Infineon 與 IRFB7534PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRL3705NPBF IRFB7534PBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Drain-Source Voltage (V_DS) 55 V —
Continuous Drain Current (I_D) at Tc 89 A —
脈衝汲極電流 [DATA_NEEDED: pulsed drain current] —
Power Dissipation (P_D) at Tc 170 W —
On-Resistance R_DS(on) 10 mOhm (typical, V_GS = 5 V) —
Gate Threshold V_GS(th) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Q_g 65.3 nC —
Maximum Junction Temperature 175 C —
Technology HEXFET (planar cell, fifth generation) StrongIRFET™ (planar N-channel)
封裝 TO-220AB (3-pin through-hole) TO-220AB
安裝類型 Through Hole Through Hole
Gate Drive Level Logic-level —
Avalanche Rated Yes (ruggedized single-pulse avalanche) —
Lead-Free (PBF suffix) Yes —
RoHS 狀態 Compliant (per PBF suffix) Compliant (PbF suffix)
Manufacturer — Infineon Technologies
Part Number — IRFB7534PBF
電晶體類型 — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at Tc=25C — 195 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C — 294 W
On-Resistance RDS(on) max at VGS=10V — 2.4 mOhm
Gate Threshold Voltage VGS(th) — 3.7 V (typ)
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Avalanche Energy Rated — Yes
工作溫度範圍 — -55C to +175C
MSL 等級 — MSL1 (unlimited floor life)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價