IRL540NSTRLPBF vs IRLR3410TRLPBF Perbandingan

Perbandingan bersamaan detil IRL540NSTRLPBF dari Infineon dan IRLR3410TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRL540NSTRLPBF IRLR3410TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc=25°C 36 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 60 A
On-Resistance (RDS(on)) max @ VGS=10V 44 mΩ —
On-Resistance (RDS(on)) max @ VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate-Source Voltage (VGS) max ±16 V —
Gate Threshold Voltage (VGS(th)) Logic-level —
Total Gate Charge (Qg) 49.3 nC 22.7 nC
Power Dissipation (PD) at Tc=25°C 140 W —
Power Dissipation (PD) at TA=25°C 3.8 W —
Rentang Suhu Kerja -55°C to +175°C —
Paket TO-263 (D2PAK) TO-252AA (DPAK), surface mount
Tipe Mounting Surface Mount Surface Mount (tape and reel)
Avalanche Energy Rated Yes (single-pulse) —
Status RoHS Compliant (LPBF suffix indicates lead-free) —
Level MSL [DATA_NEEDED: MSL rating] 1
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLR3410TRLPBF
Technology — HEXFET (5th generation) N-Channel MOSFET
Continuous Drain Current (ID) at TC=25C — 17 A
On-Resistance RDS(on) max @ VGS=10V — 105 mOhm
On-Resistance RDS(on) max @ VGS=5V — [DATA_NEEDED: RDS(on) @ VGS=5V]
Gate-Source Threshold VGS(th) typ — 2.0 V
Gate Drive Level — Logic level (5V capable)
Power Dissipation (PD) at TC=25C — 79 W
Suhu Hubung Kerja — -55C to +175C
RoHS Compliance — Compliant (Pb-free)
Avalanche Rated — Yes (UIS tested)

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