IRL540NSTRLPBF vs IRLR3410TRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRL540NSTRLPBF disebabkan oleh Infineon dan IRLR3410TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRL540NSTRLPBF IRLR3410TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc=25°C 36 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 60 A
On-Resistance (RDS(on)) max @ VGS=10V 44 mΩ —
On-Resistance (RDS(on)) max @ VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate-Source Voltage (VGS) max ±16 V —
Gate Threshold Voltage (VGS(th)) Logic-level —
Total Gate Charge (Qg) 49.3 nC 22.7 nC
Power Dissipation (PD) at Tc=25°C 140 W —
Power Dissipation (PD) at TA=25°C 3.8 W —
Gambaran Suhu Operasi -55°C to +175°C —
Kemasan TO-263 (D2PAK) TO-252AA (DPAK), surface mount
Jenis Pemasangan Surface Mount Surface Mount (tape and reel)
Avalanche Energy Rated Yes (single-pulse) —
Status RoHS Compliant (LPBF suffix indicates lead-free) —
Aras MSL [DATA_NEEDED: MSL rating] 1
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLR3410TRLPBF
Technology — HEXFET (5th generation) N-Channel MOSFET
Continuous Drain Current (ID) at TC=25C — 17 A
On-Resistance RDS(on) max @ VGS=10V — 105 mOhm
On-Resistance RDS(on) max @ VGS=5V — [DATA_NEEDED: RDS(on) @ VGS=5V]
Gate-Source Threshold VGS(th) typ — 2.0 V
Gate Drive Level — Logic level (5V capable)
Power Dissipation (PD) at TC=25C — 79 W
Suhu Hubungan Operasi — -55C to +175C
RoHS Compliance — Compliant (Pb-free)
Avalanche Rated — Yes (UIS tested)

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