IRLML0030TRPBF vs IRLML5103TRPBF Perbandingan
Perbandingan bersamaan detil IRLML0030TRPBF dari Infineon dan IRLML5103TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLML0030TRPBF | IRLML5103TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 5.3 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V | — |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) | — |
| Total Gate Charge (Qg) | 3.6 nC typical | — |
| Power Dissipation (PD) at TA=25C | 1.3 W | — |
| Rentang Suhu Kerja | -55C to +150C | — |
| Paket | Micro3 / SOT-23 (3-pin) | Micro3/SOT-23 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | IR HEXFET Power MOSFET | IR MOSFET |
| Level MSL | 1 (unlimited floor life per JEDEC J-STD-020) | — |
| Soldering | Wave-solder capable | — |
| Qualification | JEDEC standard | — |
| Status RoHS | Compliant | Compliant |
| Tipe Transistor | — | P-Channel MOSFET |
| Maximum Drain-Source Voltage | — | 30 V |
| Continuous Drain Current | — | 760 mA at Ta |
| Power Dissipation | — | 540 mW at Ta |
| Maximum On-Resistance | — | 600 mOhm |
| Gate Charge | — | 3.4 nC |
| Polarity | — | P-Channel |
| Drain-Source Voltage Rating | — | -30 V |
| Channel Mode | — | Enhancement |
| Suhu Kerja | — | 175 C |
| Footprint | — | SOT-23 |