IRLML0030TRPBF vs IRLML5103TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLML0030TRPBF sa pamamagitan ng Infineon at IRLML5103TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLML0030TRPBF | IRLML5103TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 5.3 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V | — |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) | — |
| Total Gate Charge (Qg) | 3.6 nC typical | — |
| Power Dissipation (PD) at TA=25C | 1.3 W | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | — |
| Packhaging | Micro3 / SOT-23 (3-pin) | Micro3/SOT-23 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | IR HEXFET Power MOSFET | IR MOSFET |
| Level ng MSL | 1 (unlimited floor life per JEDEC J-STD-020) | — |
| Soldering | Wave-solder capable | — |
| Qualification | JEDEC standard | — |
| Tindminan RoHS | Compliant | Compliant |
| Uri ng Transistor | — | P-Channel MOSFET |
| Maximum Drain-Source Voltage | — | 30 V |
| Continuous Drain Current | — | 760 mA at Ta |
| Power Dissipation | — | 540 mW at Ta |
| Maximum On-Resistance | — | 600 mOhm |
| Gate Charge | — | 3.4 nC |
| Polarity | — | P-Channel |
| Drain-Source Voltage Rating | — | -30 V |
| Channel Mode | — | Enhancement |
| Temperature na Operasyon | — | 175 C |
| Footprint | — | SOT-23 |