IRLML0030TRPBF vs IRLML5103TRPBF 比較
詳細並排比較 IRLML0030TRPBF 由 Infineon 與 IRLML5103TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLML0030TRPBF | IRLML5103TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 5.3 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V | — |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) | — |
| Total Gate Charge (Qg) | 3.6 nC typical | — |
| Power Dissipation (PD) at TA=25C | 1.3 W | — |
| 工作溫度範圍 | -55C to +150C | — |
| 封裝 | Micro3 / SOT-23 (3-pin) | Micro3/SOT-23 |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | IR HEXFET Power MOSFET | IR MOSFET |
| MSL 等級 | 1 (unlimited floor life per JEDEC J-STD-020) | — |
| Soldering | Wave-solder capable | — |
| Qualification | JEDEC standard | — |
| RoHS 狀態 | Compliant | Compliant |
| 電晶體類型 | — | P-Channel MOSFET |
| Maximum Drain-Source Voltage | — | 30 V |
| Continuous Drain Current | — | 760 mA at Ta |
| Power Dissipation | — | 540 mW at Ta |
| Maximum On-Resistance | — | 600 mOhm |
| Gate Charge | — | 3.4 nC |
| Polarity | — | P-Channel |
| Drain-Source Voltage Rating | — | -30 V |
| Channel Mode | — | Enhancement |
| 工作溫度 | — | 175 C |
| Footprint | — | SOT-23 |