IRLML0030TRPBF vs IRLML6246TRPBF Perbandingan

Perbandingan bersamaan detil IRLML0030TRPBF dari Infineon dan IRLML6246TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLML0030TRPBF IRLML6246TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 5.3 A —
Drain-Source On-Resistance (RDS(on)) max 27 mOhm at VGS=4.5V —
Gate-Source Threshold Voltage (VGS(th)) Logic-level (5 V optimized) —
Total Gate Charge (Qg) 3.6 nC typical —
Power Dissipation (PD) at TA=25C 1.3 W —
Rentang Suhu Kerja -55C to +150C -55C to +150C (junction)
Paket Micro3 / SOT-23 (3-pin) SOT-23 (Micro3)
Tipe Mounting Surface Mount Surface Mount
Technology IR HEXFET Power MOSFET IR MOSFET (HEXFET Power MOSFET)
Level MSL 1 (unlimited floor life per JEDEC J-STD-020) MSL1 (per JEDEC J-STD-020)
Soldering Wave-solder capable —
Qualification JEDEC standard —
Status RoHS Compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLML6246TRPBF
Drain-to-Source Voltage (VDS) — 20 V
Continuous Drain Current (ID) at Ta=25C — 4.1 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
On-Resistance RDS(on) max @ VGS=4.5V — 46 mOhm
On-Resistance RDS(on) max @ VGS=2.5V — [DATA_NEEDED: RDS(on) at 2.5V]
Gate Threshold Voltage VGS(th) typ — 1.1 V (logic-level)
Gate Charge Qg typ — [DATA_NEEDED: Qg total gate charge]
Power Dissipation (Ta=25C) — 1.3 W
RoHS Compliance — Yes (Pb-free)
Bebas Halogen — Yes

Spek dan Sumber

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