IRLML0030TRPBF vs IRLML6246TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML0030TRPBF disebabkan oleh Infineon dan IRLML6246TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLML0030TRPBF IRLML6246TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 5.3 A —
Drain-Source On-Resistance (RDS(on)) max 27 mOhm at VGS=4.5V —
Gate-Source Threshold Voltage (VGS(th)) Logic-level (5 V optimized) —
Total Gate Charge (Qg) 3.6 nC typical —
Power Dissipation (PD) at TA=25C 1.3 W —
Gambaran Suhu Operasi -55C to +150C -55C to +150C (junction)
Kemasan Micro3 / SOT-23 (3-pin) SOT-23 (Micro3)
Jenis Pemasangan Surface Mount Surface Mount
Technology IR HEXFET Power MOSFET IR MOSFET (HEXFET Power MOSFET)
Aras MSL 1 (unlimited floor life per JEDEC J-STD-020) MSL1 (per JEDEC J-STD-020)
Soldering Wave-solder capable —
Qualification JEDEC standard —
Status RoHS Compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLML6246TRPBF
Drain-to-Source Voltage (VDS) — 20 V
Continuous Drain Current (ID) at Ta=25C — 4.1 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
On-Resistance RDS(on) max @ VGS=4.5V — 46 mOhm
On-Resistance RDS(on) max @ VGS=2.5V — [DATA_NEEDED: RDS(on) at 2.5V]
Gate Threshold Voltage VGS(th) typ — 1.1 V (logic-level)
Gate Charge Qg typ — [DATA_NEEDED: Qg total gate charge]
Power Dissipation (Ta=25C) — 1.3 W
RoHS Compliance — Yes (Pb-free)
Boson Bebas — Yes

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