IRLML0030TRPBF vs IRLML6246TRPBF 比較

詳細並排比較 IRLML0030TRPBF 由 Infineon 與 IRLML6246TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLML0030TRPBF IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRLML0030TRPBF ✓ 啟用中
Infineon
IRLML6246TRPBF IRLML6246TRPBF - 20V N-Channel HEXFET MOSFET | Infineon

IRLML6246TRPBF - 20V N-Channel HEXFET MOSFET | Infineon

IRLML6246TRPBF ✓ 啟用中

規格比較

參數 IRLML0030TRPBF IRLML6246TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 5.3 A —
Drain-Source On-Resistance (RDS(on)) max 27 mOhm at VGS=4.5V —
Gate-Source Threshold Voltage (VGS(th)) Logic-level (5 V optimized) —
Total Gate Charge (Qg) 3.6 nC typical —
Power Dissipation (PD) at TA=25C 1.3 W —
工作溫度範圍 -55C to +150C -55C to +150C (junction)
封裝 Micro3 / SOT-23 (3-pin) SOT-23 (Micro3)
安裝類型 Surface Mount Surface Mount
Technology IR HEXFET Power MOSFET IR MOSFET (HEXFET Power MOSFET)
MSL 等級 1 (unlimited floor life per JEDEC J-STD-020) MSL1 (per JEDEC J-STD-020)
Soldering Wave-solder capable —
Qualification JEDEC standard —
RoHS 狀態 Compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLML6246TRPBF
Drain-to-Source Voltage (VDS) — 20 V
Continuous Drain Current (ID) at Ta=25C — 4.1 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
On-Resistance RDS(on) max @ VGS=4.5V — 46 mOhm
On-Resistance RDS(on) max @ VGS=2.5V — [DATA_NEEDED: RDS(on) at 2.5V]
Gate Threshold Voltage VGS(th) typ — 1.1 V (logic-level)
Gate Charge Qg typ — [DATA_NEEDED: Qg total gate charge]
Power Dissipation (Ta=25C) — 1.3 W
RoHS Compliance — Yes (Pb-free)
無鹵素 — Yes

資料表與資源

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