IRLML2030TRPBF vs IRLML6346TRPBF Perbandingan

Perbandingan bersamaan detil IRLML2030TRPBF dari Infineon dan IRLML6346TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLML2030TRPBF IRLML6346TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IRLML2030TRPBF —
FET Type N-Channel —
Technology HEXFET (IR MOSFET) HEXFET Power MOSFET
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) at Ta 2.7 A —
Power Dissipation (PD) at Ta 1.3 W —
On-Resistance RDS(on) max @ VGS=10V 100 mOhm —
On-Resistance RDS(on) max @ VGS=4.5V 154 mOhm —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Charge (Qg) typ 1.0 nC —
Paket Micro3 (SOT-23) Micro3 / SOT-23
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +150C (junction) —
Level MSL MSL 1 1
RoHS Compliance Yes (lead-free, halogen-free) —
Qualification JEDEC standard —
Soldering Wave-solder compatible —
Polarity — N-Channel
Continuous Drain Current (ID) — 3.4 A (TA=25C)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=2.5V — 63 mOhm
RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Gate Drive Capability — 2.5V logic-level
Maximum Power Dissipation (PD) — 1.3 W (TA=25C, 1in2 FR4)
Suhu Hubung Kerja — -55C to +150C
Lead-Free Finish — Yes (PBF suffix)
Status RoHS — Compliant

Spek dan Sumber

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