IRLML6346TRPBF vs IRLML0030TRPBF Perbandingan
Perbandingan bersamaan detil IRLML6346TRPBF dari Infineon dan IRLML0030TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLML6346TRPBF | IRLML0030TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 3.4 A (TA=25C) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max @ VGS=2.5V | 63 mOhm | — |
| RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Drive Capability | 2.5V logic-level | — |
| Maximum Power Dissipation (PD) | 1.3 W (TA=25C, 1in2 FR4) | — |
| Suhu Hubung Kerja | -55C to +150C | — |
| Paket | Micro3 / SOT-23 | Micro3 / SOT-23 (3-pin) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | IR HEXFET Power MOSFET |
| Level MSL | 1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 5.3 A |
| Drain-Source On-Resistance (RDS(on)) max | — | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | — | Logic-level (5 V optimized) |
| Total Gate Charge (Qg) | — | 3.6 nC typical |
| Power Dissipation (PD) at TA=25C | — | 1.3 W |
| Rentang Suhu Kerja | — | -55C to +150C |
| Soldering | — | Wave-solder capable |
| Qualification | — | JEDEC standard |