IRLML6346TRPBF vs IRLML0030TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML6346TRPBF disebabkan oleh Infineon dan IRLML0030TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLML6346TRPBF | IRLML0030TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 3.4 A (TA=25C) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max @ VGS=2.5V | 63 mOhm | — |
| RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Drive Capability | 2.5V logic-level | — |
| Maximum Power Dissipation (PD) | 1.3 W (TA=25C, 1in2 FR4) | — |
| Suhu Hubungan Operasi | -55C to +150C | — |
| Kemasan | Micro3 / SOT-23 | Micro3 / SOT-23 (3-pin) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | IR HEXFET Power MOSFET |
| Aras MSL | 1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Status RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 5.3 A |
| Drain-Source On-Resistance (RDS(on)) max | — | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | — | Logic-level (5 V optimized) |
| Total Gate Charge (Qg) | — | 3.6 nC typical |
| Power Dissipation (PD) at TA=25C | — | 1.3 W |
| Gambaran Suhu Operasi | — | -55C to +150C |
| Soldering | — | Wave-solder capable |
| Qualification | — | JEDEC standard |