IRLML6346TRPBF vs IRLML0030TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLML6346TRPBF sa pamamagitan ng Infineon at IRLML0030TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLML6346TRPBF | IRLML0030TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 3.4 A (TA=25C) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max @ VGS=2.5V | 63 mOhm | — |
| RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Drive Capability | 2.5V logic-level | — |
| Maximum Power Dissipation (PD) | 1.3 W (TA=25C, 1in2 FR4) | — |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| Packhaging | Micro3 / SOT-23 | Micro3 / SOT-23 (3-pin) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | IR HEXFET Power MOSFET |
| Level ng MSL | 1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Tindminan RoHS | Compliant | Compliant |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 5.3 A |
| Drain-Source On-Resistance (RDS(on)) max | — | 27 mOhm at VGS=4.5V |
| Gate-Source Threshold Voltage (VGS(th)) | — | Logic-level (5 V optimized) |
| Total Gate Charge (Qg) | — | 3.6 nC typical |
| Power Dissipation (PD) at TA=25C | — | 1.3 W |
| Hanay ng Temperature na Operasyon | — | -55C to +150C |
| Soldering | — | Wave-solder capable |
| Qualification | — | JEDEC standard |