IRLTS2242TRPBF vs IRFR1205TRPBF Perbandingan

Perbandingan bersamaan detil IRLTS2242TRPBF dari Infineon dan IRFR1205TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLTS2242TRPBF IRFR1205TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -20 V 55 V
Continuous Drain Current (ID) at TA=25C -6.9 A —
Power Dissipation (PD) at TA=25C 2.0 W —
On-Resistance RDS(on) max at VGS=-10V 32 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS absolute max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] 2 V min, 4 V max
Gate Drive Voltage (logic level) 4.5 V (fully enhanced), 2.5 V capable —
Technology IR MOSFET (HEXFET) HEXFET (IR MOSFET, 5th generation)
Paket TSOP-6 (Micro 6) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) —
Package Thermal Resistance (RthJA) [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] —
Level MSL MSL1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant (PBF suffix = lead-free)
Lead-Free Yes —
Bebas Halogen Yes —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 44 A
Pulsed Drain Current (IDM) — 160 A
Gate-Source Voltage (VGS) max — +/- 20 V
On-Resistance RDS(on) at VGS=10V — 27 mOhm max
Total Gate Charge (Qg) — 43.3 nC
Power Dissition (PD) at TC=25C — 107 W
Suhu Hubung Kerja — -55C to +175C
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen status]

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