IRLTS2242TRPBF vs IRFR1205TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLTS2242TRPBF disebabkan oleh Infineon dan IRFR1205TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLTS2242TRPBF IRFR1205TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -20 V 55 V
Continuous Drain Current (ID) at TA=25C -6.9 A —
Power Dissipation (PD) at TA=25C 2.0 W —
On-Resistance RDS(on) max at VGS=-10V 32 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS absolute max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] 2 V min, 4 V max
Gate Drive Voltage (logic level) 4.5 V (fully enhanced), 2.5 V capable —
Technology IR MOSFET (HEXFET) HEXFET (IR MOSFET, 5th generation)
Kemasan TSOP-6 (Micro 6) TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) —
Package Thermal Resistance (RthJA) [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] —
Aras MSL MSL1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant (PBF suffix = lead-free)
Lead-Free Yes —
Boson Bebas Yes —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 44 A
Pulsed Drain Current (IDM) — 160 A
Gate-Source Voltage (VGS) max — +/- 20 V
On-Resistance RDS(on) at VGS=10V — 27 mOhm max
Total Gate Charge (Qg) — 43.3 nC
Power Dissition (PD) at TC=25C — 107 W
Suhu Hubungan Operasi — -55C to +175C
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen status]

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