IRLTS2242TRPBF vs IRFR1205TRPBF 比較

詳細並排比較 IRLTS2242TRPBF 由 Infineon 與 IRFR1205TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLTS2242TRPBF IRLTS2242TRPBF - 20V P-Ch HEXFET MOSFET, TSOP-6 | Infineon

IRLTS2242TRPBF - 20V P-Ch HEXFET MOSFET, TSOP-6 | Infineon

IRLTS2242TRPBF ✓ 啟用中

規格比較

參數 IRLTS2242TRPBF IRFR1205TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Polarity P-Channel —
Drain-Source Voltage (VDS) -20 V 55 V
Continuous Drain Current (ID) at TA=25C -6.9 A —
Power Dissipation (PD) at TA=25C 2.0 W —
On-Resistance RDS(on) max at VGS=-10V 32 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS absolute max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] 2 V min, 4 V max
Gate Drive Voltage (logic level) 4.5 V (fully enhanced), 2.5 V capable —
Technology IR MOSFET (HEXFET) HEXFET (IR MOSFET, 5th generation)
封裝 TSOP-6 (Micro 6) TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (junction) —
Package Thermal Resistance (RthJA) [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] —
MSL 等級 MSL1 (per JEDEC J-STD-020) —
RoHS 狀態 Compliant Compliant (PBF suffix = lead-free)
Lead-Free Yes —
無鹵素 Yes —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 44 A
Pulsed Drain Current (IDM) — 160 A
Gate-Source Voltage (VGS) max — +/- 20 V
On-Resistance RDS(on) at VGS=10V — 27 mOhm max
Total Gate Charge (Qg) — 43.3 nC
Power Dissition (PD) at TC=25C — 107 W
工作接面溫度 — -55C to +175C
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen status]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價