IRLZ34NSTRLPBF vs IRFR5305TRLPBF Perbandingan

Perbandingan bersamaan detil IRLZ34NSTRLPBF dari Infineon dan IRFR5305TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLZ34NSTRLPBF IRFR5305TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC 30 A —
Pulsed Drain Current (IDM) 110 A [DATA_NEEDED: pulsed drain current]
RDS(on) at VGS=5V 35 mOhm (typical) —
Gate Threshold Voltage (VGS(th)) Logic-level (5 V drive compatible) [DATA_NEEDED: VGS(th) range]
Total Gate Charge (Qg) 16.7 nC —
Power Dissipation (Ta) 3.8 W —
Power Dissipation (Tc) 68 W —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] —
Paket D2PAK (TO-263), surface mount TO-252AA (DPAK), surface mount
Built-in Body Diode Yes —
Configuration Single with built-in diode —
Tipe Mounting Surface Mount Surface Mount
Switching Frequency Optimization Below 100 kHz —
Cell Structure HEXFET planar (5th generation) —
Qualification JEDEC standard —
Status RoHS Compliant (Pb-free) —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -31 A
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-10V — 65 mΩ
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Power Dissipation (PD) at Tc=25C — 110 W
Suhu Hubung Kerja — -55C to +175C
Technology — HEXFET fifth-generation planar MOSFET
Avalanche Rated — Yes (fully avalanche rated)
Lead-Free / RoHS — Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

Spek dan Sumber

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