IRLZ34NSTRLPBF vs IRFR5305TRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLZ34NSTRLPBF sa pamamagitan ng Infineon at IRFR5305TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRLZ34NSTRLPBF IRFR5305TRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC 30 A —
Pulsed Drain Current (IDM) 110 A [DATA_NEEDED: pulsed drain current]
RDS(on) at VGS=5V 35 mOhm (typical) —
Gate Threshold Voltage (VGS(th)) Logic-level (5 V drive compatible) [DATA_NEEDED: VGS(th) range]
Total Gate Charge (Qg) 16.7 nC —
Power Dissipation (Ta) 3.8 W —
Power Dissipation (Tc) 68 W —
Hanay ng Temperature na Operasyon [DATA_NEEDED: operating temperature range] —
Packhaging D2PAK (TO-263), surface mount TO-252AA (DPAK), surface mount
Built-in Body Diode Yes —
Configuration Single with built-in diode —
Uri ng Pagpapasok Surface Mount Surface Mount
Switching Frequency Optimization Below 100 kHz —
Cell Structure HEXFET planar (5th generation) —
Qualification JEDEC standard —
Tindminan RoHS Compliant (Pb-free) —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at Tc=25C — -31 A
Gate-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=-10V — 65 mΩ
RDS(on) max at VGS=-5V — [DATA_NEEDED: RDS(on) at VGS=-5V]
Power Dissipation (PD) at Tc=25C — 110 W
Temperature ng Junction na Operasyon — -55C to +175C
Technology — HEXFET fifth-generation planar MOSFET
Avalanche Rated — Yes (fully avalanche rated)
Lead-Free / RoHS — Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation — Left orientation (TRLPBF = Tape & Reel, Left)

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