IRLZ34NSTRLPBF vs IRFS4010TRLPBF Perbandingan
Perbandingan bersamaan detil IRLZ34NSTRLPBF dari Infineon dan IRFS4010TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLZ34NSTRLPBF | IRFS4010TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | 100 V |
| Continuous Drain Current (ID) at TC | 30 A | — |
| Pulsed Drain Current (IDM) | 110 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) at VGS=5V | 35 mOhm (typical) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | 16.7 nC | 143 nC |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 68 W | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Paket | D2PAK (TO-263), surface mount | D2PAK (TO-263AB), surface mount |
| Built-in Body Diode | Yes | — |
| Configuration | Single with built-in diode | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Switching Frequency Optimization | Below 100 kHz | — |
| Cell Structure | HEXFET planar (5th generation) | — |
| Qualification | JEDEC standard | JEDEC standard |
| Status RoHS | Compliant (Pb-free) | Compliant |
| Technology | — | IR MOSFET (HEXFET) |
| Continuous Drain Current (ID) at TC=25C | — | 180 A |
| RDS(on) max @ VGS=10V | — | 4.7 mOhm |
| Gate-to-Source Voltage (VGS) max | — | Plus or minus 20 V |
| Power Dissipation (PD) at TC=25C | — | 375 W |
| Suhu Hubung Kerja | — | -55C to +175C |
| Gate Drive Voltage | — | 10 V (normal level, optimized) |
| Level MSL | — | 1 |