IRLZ34NSTRLPBF vs IRFS4010TRLPBF 比較
詳細並排比較 IRLZ34NSTRLPBF 由 Infineon 與 IRFS4010TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLZ34NSTRLPBF | IRFS4010TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | 100 V |
| Continuous Drain Current (ID) at TC | 30 A | — |
| Pulsed Drain Current (IDM) | 110 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) at VGS=5V | 35 mOhm (typical) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | 16.7 nC | 143 nC |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 68 W | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | — |
| 封裝 | D2PAK (TO-263), surface mount | D2PAK (TO-263AB), surface mount |
| Built-in Body Diode | Yes | — |
| Configuration | Single with built-in diode | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Switching Frequency Optimization | Below 100 kHz | — |
| Cell Structure | HEXFET planar (5th generation) | — |
| Qualification | JEDEC standard | JEDEC standard |
| RoHS 狀態 | Compliant (Pb-free) | Compliant |
| Technology | — | IR MOSFET (HEXFET) |
| Continuous Drain Current (ID) at TC=25C | — | 180 A |
| RDS(on) max @ VGS=10V | — | 4.7 mOhm |
| Gate-to-Source Voltage (VGS) max | — | Plus or minus 20 V |
| Power Dissipation (PD) at TC=25C | — | 375 W |
| 工作接面溫度 | — | -55C to +175C |
| Gate Drive Voltage | — | 10 V (normal level, optimized) |
| MSL 等級 | — | 1 |