IRS2005STRPBF vs IR21271STRPBF Perbandingan

Perbandingan bersamaan detil IRS2005STRPBF dari Infineon dan IR21271STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2005STRPBF IR21271STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-Bridge Gate Driver —
Driven Configuration High-Side and Low-Side (Half-Bridge) —
Channel Type Independent —
Jumlah Output 2 1
Logic Type Non-Inverting —
Maximum Offset Voltage (High-Side) 200 V —
Peak Source Current (typ.) 0.29 A —
Peak Sink Current (typ.) 0.6 A —
Supply Voltage (VCC) [DATA_NEEDED: VCC range min/max] 9 V to 20 V
Undervoltage Lockout VCC and VBS UVLO integrated —
Input Compatibility 3.3 V / 5 V logic-level inputs —
Paket / Case 8-SOIC (0.154", 3.90 mm width) —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -40 °C to +125 °C —
Packaging Tape & Reel (TR) —
Product Status Active —
Status RoHS Compliant (PBF suffix indicates Pb-free) —
Configuration — High-Side or Low-Side
Input Polarity — Non-Inverting
High-Side Offset Voltage — 600 V max
Peak Source Current — 250 mA
Peak Sink Current — 500 mA
Propagation Delay — 200 ns typical
Waktu naik — [DATA_NEEDED: rise time]
Waktu Menurun — [DATA_NEEDED: fall time]
Suhu Kerja — -40C to +125C
Paket — 8-SOIC (3.90 mm)
Lead-Free / RoHS — Yes (Pb-Free, suffix PBF)
Integrated Current Sense — Yes (CS pin + shutdown)
dV/dt Immunity — Yes
Negative Transient Tolerance — Yes (high-side rail)

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