IRS21091STRPBF vs IR2101STRPBF Perbandingan

Perbandingan bersamaan detil IRS21091STRPBF dari Infineon dan IR2101STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS21091STRPBF IR2101STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge Half-Bridge (High-Side and Low-Side), Independent
Number of Drivers 2 2
Driven Channels High-Side and Low-Side, Synchronous —
Gate Type IGBT, N-Channel MOSFET —
Logic Input Compatibility CMOS or LSTTL, down to 3.3 V 3.3 V / 5 V / 15 V CMOS/LSTTL
Output Polarity Non-Inverting —
Supply Voltage (VCC) 10 V to 20 V —
Floating Channel Offset Voltage up to +600 V —
Negative Transient Tolerance Yes, dV/dt immune —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.6 A —
Propagation Delay (typ.) 750 ns —
Deadtime Control Programmable —
Shutdown Pin Yes —
Paket 8-SOIC (0.154", 3.90 mm width) 8-SOIC (0.154 inch, 3.90 mm Width)
Packaging Tape & Reel —
Status RoHS Compliant Compliant
Driver Type — Non-Inverting
Maximum Offset Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Source Current (Typ.) — 210 mA
Sink Current (Typ.) — 360 mA
Propagation Delay (Typ.) — 160 ns
Rise Time (Typ.) — [DATA_NEEDED: rise time]
Fall Time (Typ.) — [DATA_NEEDED: fall time]
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes (VCC and VBS)
Negative Transient Immunity on VS — Yes (dV/dt immune)
Tipe Mounting — Surface Mount
Suhu Kerja — -40 C to +125 C
Level MSL — MSL 3

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